Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Patent
1994-05-27
1999-03-09
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
4272553, 4272554, H01L 21316
Patent
active
058800417
ABSTRACT:
A method for forming a dielectric layer on a surface of a substrate uses high pressure. A pressure vessel of a high pressure oxidation equipment is heated to a predetermined temperature. The substrate is placed inside the pressure vessel. The pressure vessel is pressurized to a pressure above atmospheric pressure. A flow of an oxidizing gas and a flow of steam are introduced into the pressure vessel, wherein the steam flow is only a fraction of the oxidizing gas flow. The dielectric layer on the surface is formed through an oxidizing reaction of the oxidizing gas and steam with the surface of the substrate, wherein the flow of steam acts in a catalytic-like manner to parabolicly accelerate the oxidizing reaction at the surface.
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Bowers Jr. Charles L.
Motorola Inc.
Whipple Matthew
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