Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-09-30
1999-03-09
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438267, 438286, H01L 21336
Patent
active
058799990
ABSTRACT:
An insulated gate semiconductor device (10) having a gate structure (45) that includes a conductive spacer (32) and an extension region (46) extending from the conductive spacer (32). To form the gate structure (45), a stack having sidewalls (22) is formed over a major surface (12) of a semiconductor substrate (11). A gate dielectric (23) is then formed over the major surface (12) adjacent to the sidewalls (22). The conductive spacer (32) is formed on the gate dielectric (23). The extension region (46) is then formed using selective growth or deposition and patterning of polysilicon adjacent the conductive spacer (32).
REFERENCES:
patent: 4312680 (1982-01-01), Hsu
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4597827 (1986-07-01), Nishitani et al.
patent: 4994904 (1991-02-01), Nakagawa et al.
patent: 5091763 (1992-02-01), Sanchez
patent: 5108939 (1992-04-01), Manley et al.
patent: 5256586 (1993-10-01), Choi et al.
patent: 5286664 (1994-02-01), Hiriuchi
patent: 5541132 (1996-07-01), Davies et al.
patent: 5661048 (1997-08-01), Davies et al.
Davies Robert B.
Ilderem Vida
Park Heemyong
Jackson Kevin B.
Motorola Inc.
Nguyen Tuan H.
LandOfFree
Method of manufacturing an insulated gate semiconductor device h does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing an insulated gate semiconductor device h, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing an insulated gate semiconductor device h will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1320355