Process for fabricating a thin film transistor semiconductor dev

Details Process for fabricating a thin film transistor semiconductor dev Process for fabricating a thin film transistor semiconductor dev

1996-04-23

1999-03-09

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438 96, 438 97, 438149, 438154, 257 66, 117 8, H01L 2110

Patent

active

058799770

ABSTRACT:
A process for fabricating a semiconductor by crystallizing a silicon film in a substantially amorphous state by annealing it at a temperature not higher than the crystallization temperature of amorphous silicon, and it comprises forming selectively, on the surface or under an amorphous silicon film, a coating, particles, clusters, and the like containing nickel, iron, cobalt, platinum or palladium either as a pure metal or a compound thereof such as a silicide, a salt, and the like, shaped into island-like portions, linear portions, stripes, or dots; and then annealing the resulting structure at a temperature lower than the crystallization temperature of an amorphous silicon by 20.degree. to 150.degree. C.

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