Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent
1995-02-01
1999-11-16
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
117 86, 117108, 438267, 438268, C30B 2516
Patent
active
059850256
ABSTRACT:
Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.
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Aspnes et al., "Growth of Al.sub.x Ga.sub.1-x As Parabolic Quantum Wells by Real-time Feedback Control of Composition", Appl. Phys. Lett. 60(10), Mar. 9, 1992, pp. 1244-1246.
Celii Francis G.
Kao Yung-Chung
Katz Alan J.
Moise Theodore S.
Brady III Wade James
Donaldson Richard L.
Kunemund Robert
Swayze, Jr. W. Daniel
Texas Instruments Incorporated
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