Method of treating surfaces with atomic or molecular beam

Details Method of treating surfaces with atomic or molecular beam Method of treating surfaces with atomic or molecular beam

1994-07-05

1996-09-10

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 13, 156345, 216 66, H01L 2100

Patent

active

055542573

ABSTRACT:
A molecular or atomic beam for cleaning or etching semiconductor substrates, or for forming a thin film on a semiconductor substrate is formed by generating a chemical reaction between at least two gases introduced into a reaction chamber. The products of the chemical reaction, and optionally additional atoms or molecules introduced into the reaction chamber, pass through an aperture to form a beam that is projected onto a sample supported in a sample chamber. The translation energy generated by the chemical reaction accelerates the atoms, molecules and/or particles to a high speed to enable cleaning, etching or depositing processes to be formed with the beam without damaging the surface of the substrate being treated.

REFERENCES:
patent: 4740267 (1988-04-01), Knauer et al.
patent: 5108535 (1992-04-01), Ono et al.
patent: 5286331 (1994-02-01), Chen et al.
Journal of Applied Physics (64(7), Oct. 1, 1988, pp. 3697-3705.

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