Systems and methods for detecting end of chamber clean in a ther

Details Systems and methods for detecting end of chamber clean in a ther Systems and methods for detecting end of chamber clean in a ther

1996-11-13

1999-03-09

Powell, William

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

156345, 216 67, 134 11, B44C 122

Patent

active

058795740

ABSTRACT:
The present invention provides systems, methods and apparatus for high temperature (at least about 500.degree.-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

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