Plasma generating method and apparatus

Electricity: electrical systems and devices – Electric charge generating or conducting means – With specific power supply

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2504922, H01J 37317

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054249058

ABSTRACT:
Three electrodes are disposed at lateral sides of a plasma generating chamber of an etching apparatus serving as a plasma generating apparatus. A sample stage is disposed at a lower part of the plasma generating chamber, and an opposite electrode is disposed at an upper part thereof. High frequency electric power having a first frequency is supplied to the sample stage and the opposite electrode. Respectively supplied to the three electrodes 4, 5, 6 are high frequency electric powers which are oscillated by a three-phase magnetron, which have a second frequency different from the first frequency and of which respective phases are successively different by about 120.degree. from one another, thus forming a rotational electric field in the plasma generating chamber.

REFERENCES:
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patent: 5127988 (1992-07-01), Kawamura et al.
patent: 5132544 (1992-07-01), Glauish
patent: 5162633 (1992-11-01), Sonobe et al.
patent: 5200158 (1993-04-01), Jacob
patent: 5242561 (1993-09-01), Sato
patent: 5290993 (1994-03-01), Kaji et al.

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