Circuit for writing bipolar memory cells

Details Circuit for writing bipolar memory cells Circuit for writing bipolar memory cells

1985-12-16

1987-10-27

Moffitt, James W.

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

365174, G11C 700

Patent

active

047034580

ABSTRACT:
A circuit for writing bipolar memory cells is provided that reduces power dissipation by requiring only a small voltage change on the bit lines between read and write modes. The memory circuit includes a first voltage terminal, a second voltage terminal, a plurality of word lines, a plurality of bit lines, and a plurality of memory cells, wherein the plurality of memory cells are arranged in a matrix of rows and columns. Each of the cells in a row are coupled between the first voltage terminal and a word line, and each of the cells in a column are coupled between a pair of the bit lines. A word line driver circuit is coupled between the first voltage terminal and one of the word lines of each of the rows for selectively applying voltage to the one of the word lines. A decoder circuit is coupled to the bit lines for enabling current through the bit lines. A current source is coupled between the second voltage terminal and each of the decoder circuits for sinking a read current through the bit lines of each column. A write current source is switchably coupled between the decoder circuits and the second voltage terminal for sinking a write current through the bit lines of each column.

REFERENCES:
patent: 4625299 (1986-11-01), Isogai et al.

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