Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-05-29
2000-11-21
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438623, 438629, 438644, 438780, H01L 2144
Patent
active
061502529
ABSTRACT:
Cavities such as vias and contacts formed in semiconductor devices are filled in a multi-stage process to provide low resistance electrical connections. A liner is first deposited into the cavity at a relatively low power and deposition rate to enhance "wetting" of a subsequently deposited fill material. The fill material is deposited at a comparatively greater power and deposition rate to close the mouth of the cavity, after which the fill material is extruded at high pressure into the cavity to substantially fill the cavity. Relatively low processing temperatures and high pressures are utilized to allow for the use of lower dielectric constant dielectrics, which are thermally unstable at conventional processing temperatures.
REFERENCES:
patent: 5008216 (1991-04-01), Huang et al.
patent: 5011793 (1991-04-01), Obinata
patent: 5073518 (1991-12-01), Doan et al.
patent: 5308792 (1994-05-01), Okabayashi et al.
patent: 5356836 (1994-10-01), Chen et al.
patent: 5371042 (1994-12-01), Ong
patent: 5401675 (1995-03-01), Lee et al.
patent: 5523259 (1996-06-01), Merchant et al.
Hong Qi-Zhong
Hsu Wei-Yung
Braden Stanton C.
Brady III Wade James
Donaldson Richard L.
Nguyen Tuan H.
Texas Instruments Incorporated
LandOfFree
Multi-stage semiconductor cavity filling process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multi-stage semiconductor cavity filling process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-stage semiconductor cavity filling process will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1256564