Method for crucible-free zone meeting of semiconductor crystal r

Details Method for crucible-free zone meeting of semiconductor crystal r Method for crucible-free zone meeting of semiconductor crystal r

1977-03-17

1982-02-09

Emery, Steven J.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617R, 422250, C30B 1330

Patent

active

RE0308633

ABSTRACT:
Polycrystalline semiconductor rods are converted to dislocation-free monocrystal rods by positioning a polycrystalline rod within a crucible-free zone melt environment with a seed crystal attached to one end thereof, generating a melt zone at the juncture of the seed crystal and the polycrystalline rod, controllably moving the melt zone away from the juncture and through the polycrystalline rod to a select point thereon, uniformly supporting the cone-shaped lower portion of the rod being processed so as to prevent oscillations and the like at the juncture of the rod in the seed crystal and controllably moving the melt zone from the select point to the remainder of the rod. A uniform support is preferably provided by an axially movable funnel-shaped casing which is attached to the seed crystal holding member and which, when moved into its operating position, is filled with a self-adjusting oscillation or vibration dampening means, such as molten metal, metal spheroids, quartz particles, sand, etc.

REFERENCES:
patent: 3159408 (1964-12-01), Sanchez
patent: 3179593 (1965-04-01), Reuschel
patent: 3498846 (1970-03-01), Keller
patent: 3781209 (1973-12-01), Reuschel
Lehovec, The Review of Scientific Instru., vol. 24, #8, Aug. 1953, pp. 652-655.

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