Plasma surface treatment method and resulting device

Details Plasma surface treatment method and resulting device Plasma surface treatment method and resulting device

1998-03-17

2000-11-21

Nuzzolillo, Maria

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

438723, B44C 122

Patent

active

061498297

ABSTRACT:
A method for treating a surface of an object using a hydrogen bearing compound. The method includes a step of generating a plasma from a Gas-C in a plasma source, where the Gas-C includes at least a gas-A and a gas-B. Gas-A is selected from a compound including at least a nitrogen bearing compound (e.g., N.sub.2) or an other gas, e.g., gas of in elements in group 18 classified in the atomic periodic table. Gas-B has at least a H.sub.2 O bearing compound or is preferably H.sub.2 O. The method also includes a step of injecting a Gas-D downstream of the plasma source of said Gas C, and setting an object downstream of the Gas-D injection and downstream of the plasma source. The object has a surface to be processed. The method also includes a step of processing the surface of said object by a mixture species generated from the Gas-C in the plasma and the Gas-D. The H.sub.2 O bearing compound in Gas-C includes a H.sub.2 O bearing compound that is lower in concentration than a Gas-A concentration.

REFERENCES:
patent: 5591492 (1997-01-01), Hirai et al.
patent: 5628883 (1997-05-01), Sugiyama

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