Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-08-06
2000-08-29
Booth, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438660, 438663, 438530, 438653, 438627, 438643, 438592, H01L 21336
Patent
active
061107891
ABSTRACT:
A method of forming a contact is provided. The method includes the steps of forming a contact hole, creating an enhanced doped region in the contact hole, annealing the enhanced doped region, depositing a barrier metal in the contact hole, annealing the barrier material, and depositing a conductive material in the contact hole. A contact made in this manner exhibits lower contact-to-substrate leakage currents than does a contact formed via conventional single-anneal techniques.
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Hagen Kenneth N.
Ireland Philip J.
Rhodes Howard E.
Wu Zhiqiang
Booth Richard
Micro)n Technology, Inc.
Zarneke David A.
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