Method for forming bottom electrode of capacitor

Details Method for forming bottom electrode of capacitor Method for forming bottom electrode of capacitor

1999-04-26

2000-08-29

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438397, H01L 218242

Patent

active

06110776&

ABSTRACT:
A method for forming a bottom electrode of a capacitor is provided. A substrate having a conductive region is provided. A first insulation layer, a stop layer and a second insulation layer are formed on the substrate in order. The first insulation layer, the stop layer and the second insulation layer are patterned to form an opening. The opening exposes the conductive region in the substrate. A first conductive layer is formed on the second insulation layer and fills the opening, and then the first conductive layer is defined to form a plug and a metal plate. The plug can be electrically connected with the conductive region. The metal plate is used as a mask, and the second insulation layer is removed by anisotropic etching to form a third insulation layer having a first distance from the third insulation layer surface to the stop layer surface. Then, the third insulation layer is removed by isotropic etching to form a fourth insulation layer having a second distance from the fourth insulation layer surface to the stop layer surface. A second conductive layer is formed on the fourth insulation layer and the metal plate. Finally, the second conductive layer is removed by anisotropic etching to expose the metal plate and a portion of the fourth insulation layer. Then, the fourth insulation layer is removed by isotropic etching to expose the stop layer and the plug.

REFERENCES:
patent: 6033951 (2000-03-01), Chao
patent: 6037212 (2000-03-01), Chao

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