Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1993-11-18
1994-06-14
Padgett, Marianne
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
4272552, 4273762, 4273977, B05D 306, B05D 302, C23C 1600
Patent
active
053208803
ABSTRACT:
A method of providing a silicon film having a roughened outer surface atop a semiconductor wafer comprises: a) placing a semiconductor wafer into a plasma enhanced RF powered chemical vapor deposition reactor; and b) plasma enhanced chemical vapor depositing a layer of silicon over the wafer surface by providing quantities of a silicon source gas, a carrier gas, and TiCl.sub.4 to the reactor, the atomic ratio of the quantities of silicon source gas and TiCl.sub.4 being greater than or equal to 4 at the wafer surface; and by maintaining the reactor at a selected RF power, pressure and temperature; the RF power being supplied at a frequency of at least 5 MHz and preferably at least 10 MHz, the quantities of silicon source gas, RF power, temperature and pressure being effective to produce a predominately silicon film having an outer surface, the quantity of TiCl.sub.4 being effective to induce roughness into the outer silicon surface as compared to an outer silicon surface prepared under identical conditions but for introduction of TiCl.sub.4 but ineffective to produce a predominately titanium silicide film.
REFERENCES:
patent: 4557943 (1985-12-01), Rosler et al.
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patent: 4957777 (1990-09-01), Ilderem et al.
patent: 5240739 (1993-08-01), Doan et al.
Rosler, et al., "Plasma-Enhanced CVD of Titanium Silicide", J. Vac. Sci. Technol., B2(4), (Oct.-Dec. 1984), pp. 733-737.
Tran, et al., "Polysilicon Films Prepared by Plasma Enhanced Chemical Vapor Deposition: Effect of Substrate Temp. . . ., etc.", Phys. Stat. Sol., (a) 126, K143 (1991) Graphic Research Laboratory (3M Co.) (receive Jul. 8, 1991) but no pub. month given.
Takenaka, et al., "High Mobility Poly-Si TFT's Using Solid Phase Crystallized a-Si Films Deposited, etc.", Extended Abstracts of the 22nd (1990 Int'l. Conference on Solid State Devices, ) (1990), pp. 955-958 no month given.
Doan Trung T.
Sandhu Gurtej S.
Micro)n Technology, Inc.
Padgett Marianne
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