Dry etching method

Details Dry etching method Dry etching method

1993-05-20

1994-06-14

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156664, H01L 2100

Patent

active

053207076

ABSTRACT:
Disclosed is a method of dry-etching a sample (e.g., a wafer) having an aluminum system film structure to be etched. Etching is performed in a plasma, under reduced pressure, the plasma being formed from a gas mixture containing a halogen system gas (e.g., Cl.sub.2, HBr, BCl.sub.3, etc.) and a ROH gas (e.g., CH.sub.3 OH, C.sub.3 H.sub.5 OH, C.sub.5 H.sub.7 OH, CH.sub.3 COOH, HOCH.sub.2 CH.sub.2 OH, etc.). By incorporating the ROH gas with the halogen system gas, in etching, e.g., an aluminum system film structure, etching can be performed with an accurate shape corresponding to a mask pattern, irrespective of the pattern density. Moreover, the aluminum system film structure can be etched at a uniform speed irrespective of the pattern density; and a selection ratio for etching the aluminum system film structure, as compared with etching material (e.g., organic resist) of the mask, is improved.

REFERENCES:
patent: 4505782 (1985-03-01), Jacob

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