Pattern forming method by imparting hydrogen atoms and selective

Details Pattern forming method by imparting hydrogen atoms and selective Pattern forming method by imparting hydrogen atoms and selective

1996-06-11

1999-01-19

Codd, Bernard P.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430323, 430324, 438700, 216 41, 216 51, 427552, G03C 500, B44C 122, B05D 306

Patent

active

058612335

ABSTRACT:
A pattern forming method comprises subjecting a surface of a semiconductor substrate to a surface treatment for imparting hydrogen atoms, irradiating a desired region of said surface with an energy ray, selectively forming a metal film on a non-irradiated region other than the desired region, and etching said semiconductor substrate using said metal film as a mask.

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Howe. A.T. et al., "Patterned tungsten chemical vapor deposition on amorphous silicon by excimer laser modification of the native oxide", Applied Physics Letters, Jun. 4, 1990, vol. 56, pp. 2322-2324.
Bouree J.E. et al., A1 photodeposition and light-induced nucleation on p-type Si from TMA, Laser- and Particle-Beam Chemical Processes on Surfaces Symposium, Materials Research Society, vol. 129, pp. 251-258.
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Japanese Abstract, Derwent Publications Ltd., Class E19, AN 87-031813 & JP-A-61 286 847, Dec. 17, 1986.

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