Static type semiconductor memory device capable of operating at

Details Static type semiconductor memory device capable of operating at Static type semiconductor memory device capable of operating at

1996-03-01

1997-11-11

Dinh, Son T.

Static information storage and retrieval

Systems using particular element

Flip-flop

365174, 365177, 365182, 257378, 257903, G11C 1100, H01L 2702

Patent

active

056871112

ABSTRACT:
A pair of driving bipolar transistors of a lateral type T1 and T2 have emitters coupled to a ground potential, collectors connected to a pair of highly resistive elements R1 and R2. Highly resistive elements R1 and R2 have respective other ends coupled to power supply potential V.sub.CC, and bases and collectors of transistors T1 and T2 are cross-connected to each other, thereby forming a flipflop circuit. Access MOS transistors Q3 and Q4 having a gate potential controlled by word line WL are each connected to form a conduction path between one of storage nodes A and B and one of the pair of bit lines BL and /BL.

REFERENCES:
patent: 3986173 (1976-10-01), Baitinger et al.
patent: 4661831 (1987-04-01), Schmitt-Landsiedel et al.
patent: 5404030 (1995-04-01), Kim et al.
patent: 5453636 (1995-09-01), Eitan et al.
"A 34ns 1-Mbit CMOS SRAM Using Triple Polysilicon" by Tomohisa WADA et al., IEEE, 1987.
"A 9-ns 1 Mbit CMOS SRAM" by Katsuro Sasaki et al., IEEE, 1989.

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