Ferroelectric random access memory devices having short-lived ce

Static information storage and retrieval – Systems using particular element – Ferroelectric

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365201, 365205, G11C 1122

Patent

active

059911891

ABSTRACT:
A ferroelectric random access memory device stores a data bit in a pair of ferroelectric capacitors in the form of remanence varied along a hysteresis loop, and a sense amplifier increases the magnitude of a potential difference produced on a bit line pair due to the remanence, wherein the insensible voltage range of the sense amplifier is intentionally increased in a life test for the pair of ferroelectric capacitors so as to screen out a short-lived ferroelectric capacitor.

REFERENCES:
patent: 5086412 (1992-02-01), Jaffe et al.
patent: 5254482 (1993-10-01), Fisch
patent: 5297077 (1994-03-01), Imai et al.
patent: 5677865 (1997-10-01), Seyyedy

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