Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-11-05
1999-11-23
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438596, H01L 218247
Patent
active
059899603
ABSTRACT:
A split gate type transistor device and a method for making it. The transistor has a substrate, and a floating gate electrode is located on the substrate. A control gate electrode is provided having thick and thin film sections over the floating electrode. A source region and a drain region are formed separately in the substrate. The thin film section is formed partially over the drain region and impurity is passed into the substrate through the thin film section to form the drain region.
REFERENCES:
patent: 4629520 (1986-12-01), Ueno et al.
patent: 5029130 (1991-07-01), Yeh
patent: 5030584 (1991-07-01), Nakata
patent: 5063172 (1991-11-01), Manley
patent: 5108939 (1992-04-01), Manley et al.
patent: 5323037 (1994-06-01), Su
patent: 5444653 (1995-08-01), Nagasawa et al.
patent: 5494838 (1996-02-01), Chang et al.
patent: 5585293 (1996-12-01), Sharma et al.
Wang, et al., "A Study of Plasma Treatments on Siloxane SOB," IEEE VMIC Conference, Jun. 7-8, 1994, pp. 101-107.
Chiang et al., Defects Study on Spin on Glass Planarization Technology, IEEE VMIC Conference, Jun. 15-16, 1987, pp. 404-412.
Lai-Juh Chen, et al., "Fluorine-Implanted Treatment (FIT) SOG for the Non-Etchback Intermetal Dielectric," IEEE VMIC Conference, Jun. 7-8, 1994, pp. 81-86.
Moriya et al., "Modification Effects in Ion-Implanted SiO.sub.2 Spin-on-Glass," J. Electrochem. Soc., vol. 140, No. 5, May 1993, pp. 1442-1450.
Matsuura et al., "An Advanced Interlayer Dielectric System with Partially Converted Organic SOG Using Plasma Treatment," IEEE VMIC Conference, Jun. 8-9, 1993, pp. 113-115.
Ishida et al., "Mechanism for AlSiCu Alloy Corrosion," Jpn. J. Appl. Phys., vol. 31 (1992), pp. 2045-2048.
Doki et al., "Moisture-Blocking Mechanism of ECR-Plasma," IEEE VMIC Conference, Jun. 7-8, 1994, pp. 235-139.
Shimokawa et al., "Suppression of MOSFET hot carrier degradation by P-SiO underlayer," The Institute of Electronics, Information and Communication Engineers, Technical Report of IEICE, SDM92-133 (1992-12), pp. 89-94.
Murase et al., "Dielectric Constant of Silicon Dioxide Deposited by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone," Jpn. J. Appl. Phys., vol. 33 (1994), pp. 1385-1389.
Chaudhari Chandra
Sanyo Electric Co,. Ltd.
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