Method of manufacturing short channel MOS devices

Details Method of manufacturing short channel MOS devices Method of manufacturing short channel MOS devices

1996-11-06

1999-03-30

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438289, 438298, 438451, H01L 21336

Patent

active

058888730

ABSTRACT:
Short channel MOS semiconductor devices are produced by implanting impurity ions through gate electrode and gate oxide layers, before patterning the gate electrode, using a composite mask of silicon oxide and silicon nitride, to form a shallow channel region in the substrate for adjusting the threshold voltage and a deeper well region for preventing punch through. In another embodiment, impurity ions are implanted to form lightly doped and heavily doped source/drain regions in a single ion implantation step using a thermally grown oxide region having bird's beaks as a mask. Self-aligned lightly doped regions are formed under the bird's beaks.

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