Materials and methods for etching tungsten polycides using silic

Details Materials and methods for etching tungsten polycides using silic Materials and methods for etching tungsten polycides using silic

1987-03-26

1988-10-18

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156657, 1566591, 156662, 252 792, H01L 21308

Patent

active

047785632

ABSTRACT:
A polycide etch process using a SiCl.sub.4 :HCl reactive gas flow rate ratio of at least about 1:1 for etching the polysilicon without etching, notching or degrading the overlying silicide. Thus, after patterning the silicide using a photoresist mask, the silicide can be used as the mask for etching the polysilicon, thereby providing precise pattern transfer to the polysilicon, independent of photoresist degradation. Also, a thinner, more precisely patterned photoresist mask can be used.

REFERENCES:
patent: 4422897 (1983-12-01), Horwitz
patent: 4613400 (1986-09-01), Tam et al.
patent: 4680086 (1987-07-01), Thomas et al.

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