Method of forming a TiN/W barrier layer for a hot Al plug

Details Method of forming a TiN/W barrier layer for a hot Al plug Method of forming a TiN/W barrier layer for a hot Al plug

1997-10-27

1999-10-05

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438654, 438656, 438688, H01L 2144

Patent

active

059638303

ABSTRACT:
The present invention relates to a method of forming a barrier metal layer for a hot Al plug and its structure and more particularly to remarkably ameliorate the performance of a barrier metal layer preventing Al metal used as an interconnection layer from diffusing into a silicon substrate. A barrier metal layer according to the present invention is a stacked structure comprising a top layer of Tungsten (W) formed by a Chemical Vapor Deposition (CVD) method and a bottom layer of TiN. Then, a Al interconnection layer deposited at high temperature fills a plug and finishes a plug structure having advantages of low manufacturing cost and full prevention of Al diffusion.

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Silicon Processing for the VLSI Era, Volume 1--Process Technology, Wolf, S. and R.N. Tauber, Lattice Press, pp. 332 & 369, 1986.

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