Method of forming selective epitaxial film

Details Method of forming selective epitaxial film Method of forming selective epitaxial film

1997-04-04

1999-10-05

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

438341, 438416, 438429, H01L 2120

Patent

active

059638222

ABSTRACT:
According to a method of fabricating a selective epitaxial film, a thin insulating film serving as a mask is formed on the entire surface of a semiconductor substrate having a (100) plane. An opening portion reaching the semiconductor substrate is formed in a desired region of the thin insulating film. An epitaxial film is selectively grown in the opening portion. The semiconductor substrate having the selective epitaxial film formed thereon is annealed at at least a pressure of 1,000 Pa and at least a temperature of 800.degree. C. to fill a gap on the contact surface between the thin insulating film and the selective epitaxial film.

REFERENCES:
patent: 4771013 (1988-09-01), Curran

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