Semiconductor device having nitrogen enhanced high permittivity

Details Semiconductor device having nitrogen enhanced high permittivity Semiconductor device having nitrogen enhanced high permittivity

1997-12-18

1999-10-05

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 21336

Patent

active

059638109

ABSTRACT:
A semiconductor device having a nitrogen enhanced high permittivity gate insulating layer and a process for manufacturing such a device is provided. Consistent with one embodiment, a high permittivity gate insulating layer is formed over a substrate using a nitrogen bearing gas. The gate insulating layer has a dielectric constant of at least 20. At least one gate electrode is formed over the high permittivity gate insulating layer. An optional nitride capping layer can be formed between the high permittivity gate insulating layer and the gate electrode. The nitrogen bearing gas may include one or more nitrogen bearing species, such as NO, NF.sub.3 or N2, for example. The use of nitrogen in the formation of a high permittivity gate insulating layer can, for example, reduce oxidation of the high permittivity layer and increase the ability to control the characteristics of the gate insulating layer.

REFERENCES:
patent: 5834353 (1998-11-01), Wu
U.S. application serial No. 08/920,384, filed Aug. 29, 1997.

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