Plasma processing method and apparatus

Details Plasma processing method and apparatus Plasma processing method and apparatus

1996-03-14

1999-10-05

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 68, 216 70, 216 71, 438710, 438728, 438729, 427569, 427571, 427575, 156345, 118723R, 118723I, 118723MR, 118724, H05H 100

Patent

active

059618507

ABSTRACT:
A plasma processing apparatus and method controls the temperature of those portions in the processing chamber to which reaction products or gaseous reaction products generated during plasma processing adhere, thereby minimizing the generation of foreign matter and ensuring high yields. A plasma processing gas is supplied to the plasma generation chamber 10 whose pressure is maintained at a predetermined value. Provided in the plasma generation chamber are a specimen mount 11 on which to mount an object to be processed and an evacuation mechanism 16 that evacuates the plasma generation chamber. The inner sidewall portion of the plasma generation chamber is provided with a temperature controller 34, which heats the inner side wall portion of the processing chamber above the specimen to a temperature at which reaction products sublimate, and a further temperature controller 35 is provided to cool the lower part of the specimen mount, the inner bottom portion of the processing chamber and the chamber exhaust pipe to a temperature at which the reaction products solidify.

REFERENCES:
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patent: 5254171 (1993-10-01), Hayakawa et al.
patent: 5368685 (1994-11-01), Kumihashi et al.
patent: 5449411 (1995-09-01), Fukuda et al.
patent: 5531862 (1996-07-01), Otsubo et al.
patent: 5616208 (1997-04-01), Lee
patent: 5647945 (1997-07-01), Matsuse et al.

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