Method for preparing a shield to reduce particles in a physical

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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51319, 51320, 156643, 20419235, 20429811, C23C 1434, B44C 122, B24B 100

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active

052020088

ABSTRACT:
In a method for preparing a shield for use in a physical vapor deposition process, the shield is sputter-etch cleaned to increase adhesion of deposits in the physical vapor deposition process. The sputter-etch cleaning serves to loosen contamination which may for a diffusion barrier and prevent the deposits from bonding to the shield. Also, the sputter-etch cleaning creates a high degree of micro-roughness. The roughness allows for an increase in nucleation sites which minimize the formation of interface voids. In addition to sputter-etch cleaning the shield may be bead blasted. The bead blasting makes the surface of the shield irregular. This enhances interface cracking of deposited material on a microscopic scale, resulting in less flaking.

REFERENCES:
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patent: 3773639 (1973-11-01), Masotti
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patent: 4392932 (1983-07-01), Harra
patent: 4699689 (1987-10-01), Bersin
Vossen et al., "Thin Film Processes", Academic Press, 1978, pp. 41-45 and 253-255.
EP Search Report for 91102324.0 dated Jul. 17, 1991.

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