Method of making ultra thin gate oxide using aluminum oxide

Details Method of making ultra thin gate oxide using aluminum oxide Method of making ultra thin gate oxide using aluminum oxide

1998-07-28

2000-08-08

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

H01L 21469

Patent

active

061002046

ABSTRACT:
A transistor and a method of making the same are provided. The method includes the step of forming a gate dielectric layer on the substrate where the gate dielectric layer is composed of an aluminum oxide containing material. A gate electrode is formed on the gate dielectric layer and first and second source/drain regions are formed in the substrate laterally separated to define a channel region beneath the gate electrode. The aluminum oxide containing material may be, for example, Al.sub.2 O.sub.3. Aluminum oxide provides for a gate dielectric with a thin equivalent thickness of oxide in a potentially single crystal form.

REFERENCES:
patent: 5858843 (1999-01-01), Dolle et al.
patent: 5872387 (1999-02-01), Lyding et al.
patent: 5985706 (1999-11-01), Gilmer et al.
Stanley Wolf and Richard N. Tauber; Silicon Processing for the VLSI Era, vol. 1--Process Technology; pp. 514-519; 1986.
Stanley Wolf and Richard N. Tauber; Silicon Processing for the VLSI Era, vol. 2--Process Integration; pp. 434-435; 1990.
Stanley Wolf and Richard N. Tauber; Silicon Processing for the VLSI Era, vol. 3-The Submicron MOSFET; pp. 422-438; 1995.

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