Method of forming lightly doped drain region and heavily doping

Details Method of forming lightly doped drain region and heavily doping Method of forming lightly doped drain region and heavily doping

1997-01-08

1999-08-10

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438299, 438301, 438303, 438294, H01L 21336

Patent

active

059373024

ABSTRACT:
A method of making an IGFET includes providing a semiconductor substrate with an active region, forming a gate over the active region, forming displacement material segments over portions of the active region outside the gate, implanting a dopant into the gate, the displacement material segments and the active region using a single implant step, such that a peak concentration of the dopant is in the gate and the displacement material segments, and a light concentration of the dopant implanted through one of the displacement material segments forms a lightly doped drain region in the active region, and forming a source and a drain wherein the drain includes the lightly doped drain region. In this manner, the lightly doped drain region and heavy doping for the gate can be provided using a single implant step.

REFERENCES:
patent: 5478776 (1995-12-01), Luftman et al.
patent: 5512506 (1996-04-01), Chang et al.
patent: 5599734 (1997-02-01), Byun et al.
patent: 5736419 (1998-04-01), Naem

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