Method of manufacturing semiconductor integrated circuit devices

Details Method of manufacturing semiconductor integrated circuit devices Method of manufacturing semiconductor integrated circuit devices

1997-05-27

1999-08-10

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, 438942, H01L 218242

Patent

active

059372907

ABSTRACT:
In an embodiment of a method of manufacturing semiconductor integrated circuit devices according to the present invention, word lines are provided in a straight form, which serve as gate electrodes of two selecting MOSFETs formed symmetrical about a center portion of an active region surrounded by a LOCOS oxide film on a semiconductor substrate, and bit lines have straight segments and protruding segments. Each protruding segment is formed to protrude from the bit line and is connected through a first contact hole to a first semiconductor region formed at the center portion of the active region. The straight line segments and the protruding segments are formed separately by two separate exposure steps.

REFERENCES:
patent: 5472900 (1995-12-01), Vu et al.
patent: 5688713 (1997-11-01), Linliu et al.
U. S. Patent No. 4,970,564, filed Nov. 1990.
JP-A-5-291532, Nov. 1993.

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