Measuring and testing – Speed – velocity – or acceleration – Acceleration determination utilizing inertial element
Patent
1996-11-25
1999-08-10
Oda, Christine K.
Measuring and testing
Speed, velocity, or acceleration
Acceleration determination utilizing inertial element
7351416, G01P 1508
Patent
active
059361590
ABSTRACT:
A semiconductor sensor including a movable member beam structure having a reduced deflection characteristic. The sensor includes a movable beam structure film suspended from a semiconductor substrate, with a gap interposed between the beam structure film and the substrate. The beam structure film is composed of a plurality of film layers that are laminated in a direction of film thickness. Further, a stress relieving layer is interposed between respective films to reduce overall internal stress on the structure.
REFERENCES:
patent: 4849071 (1989-07-01), Evans et al.
patent: 4893509 (1990-01-01), Maciver et al.
patent: 5059556 (1991-10-01), Wilcoxen
patent: 5095401 (1992-03-01), Zavracky
patent: 5129983 (1992-07-01), Greiff
patent: 5242863 (1993-09-01), Ziang-Zheng et al.
patent: 5262000 (1993-11-01), Welbourn et al.
patent: 5500549 (1996-03-01), Takeuchi et al.
patent: 5504356 (1996-04-01), Takeuchi et al.
patent: 5572057 (1996-11-01), Yamamoto
Payne, et al., "Surface Micromachined Accelerometer. A Technology Update," SAE Feb. 1991, pp. 127-135.
Nathanson, et al., "The Resonant Gate Transistor," IEEE Transactions On Electron Devices, Mar. 1967, pp. 117-133.
Nathanson, et al., "A Resonant-Gate Silicon Surface Transistor With High-Q Band-Pass Properties," Applied Physics Letters, Aug. 1965, pp. 84-86.
Guckel, et al., "Fabication Of Micromechanical Devices From Polysilicon Films With Smooth Surfaces," Sensors And Actuators, 1989, pp. 117-122 (no month).
Guckel, et al., "The Application Of Fine-grained, Tensile Polysilicon To Mechanically Resonant Transducers," Sensors And Actuators, 1990, pp. 346-351 (no month).
Guckel, "Surface Micromachine Pressure Transducers," Sensors And Actuators, 1991, pp. 133-146 (no month).
Orpana, et al., "Control Of Residual Stress Of Polysilicon Thin Films By Heavy Doping In Surface Micromachining," IEEE, 1991, pp. 957-960 (no month).
Burns, et al., "Thin Films For Micromechanical Sensors," J. Vac. Sci. Technol., Jul./Aug. 1990, pp. 3606-3613.
Johnson, et al., "Effects Of Processing On The Behavior Of Thin Film Materials For Micromechanical Systems", IARP Worshop, pp. 92-101 (no date).
Koskinent, et al., Microtensile Testing Of Free-standing Polysilicon Fibers Of Various Grain Sizes, J. Micromech Microeng., 1993, pp. 13-17 (no month).
Burns, "LPCVD Polysilicon," PhD Thesis, Madison, May 1988, pp. 112-123.
Guckel, et al., Fine Grained Polysilicon And Its Application To Planar Pressure Transducers, pp. 277-282. 1987. (no month).
Core, et al: "Fabrication Technology for an Integrated Surface-Micromachined Sensor", Solid State Technology, Oct. 1993, pp. 39-40.
Ao Kenichi
Kano Kazuhiko
Kanosue Masakazu
Takeuchi Yukihiro
Uenoyama Hirofumi
Nippondenso Co. Ltd.
Oda Christine K.
LandOfFree
Semiconductor sensor having multi-layer movable beam structure f does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor sensor having multi-layer movable beam structure f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor sensor having multi-layer movable beam structure f will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1121818