Integrated circuit devices having contact pads which are separat

Details Integrated circuit devices having contact pads which are separat Integrated circuit devices having contact pads which are separat

1996-06-20

1999-02-02

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

058669272

ABSTRACT:
An integrated circuit field effect transistor includes contact pads which are separated by sidewall spacers. A first pad which electrically contacts one of the spaced-apart source and drain regions extends onto the gate electrode top, to define a first pad sidewall on the gate electrode top. A first capping layer on the first pad defines a first capping layer sidewall on the first pad. A first insulating sidewall spacer is formed on the first pad sidewall and on the first capping layer sidewall. A second pad, electrically contacting the other of the source and drain regions, extends onto the gate electrode top and contacts the first insulating sidewall spacer. A second capping layer may be formed on the second pad, opposite the substrate, to define a second capping layer sidewall on the first capping layer. A second insulating sidewall spacer may be formed on the second pad sidewall and on the second capping layer sidewall. Apertures may be formed in the capping layer and in the second capping layer to expose the first pad and the second pad, respectively. A storage capacitor may be electrically connected to the first pad and a bit line may be electrically connected to the second pad. By forming the first and second pads of separate layers in separate steps, and by separating the pads by an insulating sidewall spacer, process margins can be increased and reliability and yield can be increased.

REFERENCES:
patent: 5486712 (1996-01-01), Arima

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