Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-04-15
1999-02-02
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438282, H01L 218234
Patent
active
058664572
ABSTRACT:
A new semiconductor structure for a ROM device and a method for fabricating the same are provided. The ROM device includes a plurality of trench-type source/drain regions which serve as a plurality of bit lines for the ROM device. By this method, the conventional step of using ion implantation to form the bit lines can be eliminated. Further, an insulating layer is formed between the source/drain regions and the underlying substrate such that the leakage current in the junction between the source/drain regions and the substrate can be minimized. The ON/OFF state of each of the MOSFET memory cells of the ROM device is dependent on whether the associated channel region comes into lateral contact with the neighboring source/drain regions through a mask removed portion of the insulating layer. A particular MOSFET memory cell is set to a permanently-ON state provided that its source/drain regions come into lateral contact with the associated channel region through a removed portion of the insulating layer, and is set to a permanently-OFF state otherwise. The new semiconductor structure for the ROM device allows for an increase in the breakdown voltage of the source/drain regions and thereby the operating current of the memory cells during access operation.
REFERENCES:
patent: 5668031 (1997-09-01), Hsue et al.
Chang Joni Y.
Tsai Jey
United Microelectronics Corp.
LandOfFree
Semiconductor read-only memory device and method of fabricating does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor read-only memory device and method of fabricating , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor read-only memory device and method of fabricating will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1116931