Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

1998-05-05

2000-09-19

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438403, 438431, 438433, 438446, 438447, H01L 21336, H01L 2176

Patent

active

061210978

ABSTRACT:
A polysilicon film is deposited in a trench formed in a silicon element substrate. The polysilicon film in the trench and on the silicon element substrate is anisotropically etched, so that the film remains on the side wall of the trench. The polysilicon film on the side wall is oxidized to obtain an insulating film, which buries the trench. At the same time, an oxidized film is formed on the surface of the silicon element substrate to complete a trench-mold separation area.

REFERENCES:
patent: 5196373 (1993-03-01), Beasom
patent: 5318663 (1994-06-01), Buti et al.
patent: 5496765 (1996-03-01), Schwalke
patent: 5700712 (1997-12-01), Schwalke

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