Method of making a semiconductor device with a multi-level gate

Details Method of making a semiconductor device with a multi-level gate Method of making a semiconductor device with a multi-level gate

1998-07-21

2000-09-19

Elms, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 50, 437 40, 437189, 257774, H01L 21336

Patent

active

061210943

ABSTRACT:
The present invention is directed to a new semiconductor device and a method for making same. The semiconductor device is comprised of a gate dielectric layer, a conductor layer, and a metal oxide layer positioned between the gate dielectric layer and the conductor layer. The method comprises forming a gate dielectric layer, a conductor layer, and a metal oxide layer between the gate dielectric layer and the conductor layer.

REFERENCES:
patent: 5188974 (1993-02-01), Mochizuki
patent: 5529953 (1996-06-01), Shoda
patent: 5689140 (1997-11-01), Shoda

Affiliated with

Also associated with

Rating

Method of making a semiconductor device with a multi-level gate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor device with a multi-level gate , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor device with a multi-level gate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1072182