Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-08-14
2000-09-19
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438672, H01L 218242, H01L 2120, H01L 2144
Patent
active
061210838
ABSTRACT:
There is provided a semiconductor device including (a) a semiconductor substrate, (b) a capacity device, (c) an interlayer insulating layer formed between the semiconductor substrate and the capacity device for electrically isolating them with each other, the interlayer insulating layer being formed below the capacity device with a contact hole therethrough, (d) a contact plug composed of an electrically conductive material and formed in the contact hole, (e) a first film composed of a first material through which hydrogen is not allowed to pass, and formed between the interlayer insulating layer and capacity device, (f) a second film composed of a second material through which hydrogen is not allowed to pass, and formed on an inner wall of the contact hole, (g) a third film composed of a third material through which hydrogen is not allowed to pass, and formed to cover an upper surface of the capacity device therewith, and (h) a fourth film composed of a fourth material through which hydrogen is not allowed to pass, and formed to cover a side surface of the capacity device therewith. The first, second, third, and fourth materials are silicon nitride, for instance. Since a capacity device having a capacitive film composed of metal oxide readily reduced by hydrogen is entirely covered with first to fourth films, which are composed of silicon nitride, for instance, it is possible to avoid the capacitive film from being reduced, which ensures that the capacitive film is not deteriorated.
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Chaudhari Chandra
Kebede Brook
NEC Corporation
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