Deposition film orientation and reflectivity improvement using a

Details Deposition film orientation and reflectivity improvement using a Deposition film orientation and reflectivity improvement using a

1996-03-27

2000-09-19

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

42725534, 42725536, 427255391, 4272557, 427 99, 2041921, 20419227, C23C 1434, C23C 1606, C23C 1622

Patent

active

061208442

ABSTRACT:
The present invention relates generally to an improved apparatus and process to provide a thin self-aligning layer prior to forming a conducting film layer thereover to improve the film characteristics and deposition coverage. In one aspect of the invention, a dielectric layer is formed over a conducting or semiconducting layer and etched to form an aperture exposing the underlying conducting or semiconducting layer on the aperture floor. An ultra-thin nucleation layer is then deposited by either vapor deposition or chemical vapor deposition onto the field of the dielectric layer. A CVD metal layer is then deposited onto the structure to achieve selective deposition on the floor of the aperture, while preferably also forming a highly oriented blanket layer on the field. In another aspect of the invention, a thin, self-aligning layer is formed over a barrier layer prior to deposition of a conducting film thereover. It is believed that the self-aligning layer enhances the reflectivity of the films by improving the crystal structure in the resulting film and provides improved electromigration performance by providing <111> crystal orientation. The process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the process occurs without the formation of oxides between the layers.

REFERENCES:
patent: 4897287 (1990-01-01), Berger et al.
patent: 4923717 (1990-05-01), Gladfelter et al.
patent: 4960732 (1990-10-01), Dixit et al.
patent: 5232872 (1993-08-01), Ohba
patent: 5250467 (1993-10-01), Somekh et al.
patent: 5308796 (1994-05-01), Feldman et al.
patent: 5345108 (1994-09-01), Kikkawa
patent: 5429991 (1995-07-01), Iwasaki et al.
patent: 5514425 (1996-05-01), Ito et al.
patent: 5567987 (1996-10-01), Lee

Affiliated with

Also associated with

Rating

Deposition film orientation and reflectivity improvement using a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deposition film orientation and reflectivity improvement using a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposition film orientation and reflectivity improvement using a will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1069912