Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1997-03-20

2000-05-09

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438279, 438673, 438669, H01L 21336

Patent

active

060603631

ABSTRACT:
A silicon dioxide film with a film thickness of 250 to 310 nm is formed on a conductive layer. A resist coated on the silicon dioxide film is exposed with an i-line in a wiring pattern, and developed to form the wiring pattern on the resist. The silicon dioxide film and the conductive layer are simultaneously processed using this resist as a mask. As a result, formation of tails in the resist can be suppressed, while a dielectric breakdown voltage across a conductive layer above the silicon dioxide film and the conductive layer below the silicon dioxide film is ensured, and an increase in step is suppressed. A wiring layer having a desired line width can be formed with high controllability.

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