Current sensing amplifier for SRAM

Details Current sensing amplifier for SRAM Current sensing amplifier for SRAM

1991-05-23

1993-09-21

Hille, Rolf

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

365205, 365206, 365190, 307530, G11C 700, G11C 702, G01R 1900

Patent

active

052474798

ABSTRACT:
A sense amplifier for use in conjunction with a static random access memory array (SRAM) which uses a local or column sense amplifier. The column sense amplifier is a transconductance source coupled differential pair which converts a voltage differential on bitlines from a selected memory cell in a column of memory cells whose content is being read to a current differential. A global or secondary sense amplifier inputs the current differential on sense lines from each local or column sense amplifier, converts the current differential to a voltage differential and then amplifies the voltage differential. A current differential greater than that which can be produced using prior art techniques appears on the sense lines which in turn allows the content of a memory cell being read to be determined more quickly.

REFERENCES:
patent: 4658160 (1987-08-01), Young
patent: 4677592 (1987-06-01), Sakurai et al.
patent: 4796230 (1989-01-01), Young
patent: 4888503 (1989-12-01), Young
patent: 5023841 (1991-06-01), Akrout et al.

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