Process for forming a conductive region without photoresist-rela

Details Process for forming a conductive region without photoresist-rela Process for forming a conductive region without photoresist-rela

1992-07-01

1994-07-26

Kight, III, John

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430325, 430326, 430261, 430272, 430314, 430318, 430319, 430395, G03C 500

Patent

active

053326539

ABSTRACT:
A process for forming a conductive region without photoresist-related reflective notching damage has a starting step (23) wherein a photoresist layer is formed over a conductive layer (34). The photoresist layer is used to mask the conductive layer. The photoresist layer is lithographically processed and chemically developed to form a masking photoresist region (38) overlying the conductive layer (34). The masking photoresist region has a sidewall and has a reflective notch which results from the lithographic processing. A hardening step, performed in-situ with a plurality of conductive layer etch steps, is used to form an etch-resistant polymer layer (40) on the photoresist sidewalls and on the reflective notch. The conductive layer (34) is etched after the formation of the polymer layer (40) to form a conductive region. The polymer layer (40) reduces an etch rate of the reflective notch and the photoresist sidewall so that the conductive region is formed having no reflective notching etch damage.

REFERENCES:
patent: 4207105 (1980-06-01), Sato
patent: 4333793 (1982-06-01), Lifshitz et al.
patent: 4624749 (1986-11-01), Black et al.
patent: 4778563 (1988-10-01), Stone
patent: 4871630 (1989-10-01), Giammarco et al.

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