Semiconductor memory device carrying out reading and writing ope

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

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36523008, 365233, G11C 800

Patent

active

050653652

ABSTRACT:
A dynamic random access memory, which includes a data input buffer, a data input latch circuit, a data output buffer, and a switching circuit. For example, in an operation in a read-write cycle, at first, a data signal to be written is stored in the latch circuit 7 concurrent with inputting of an address signal in response to a signal WE. A data signal read from a memory cell is output via the output buffer in response to a signal OE. The switching circuit is turned on, and the data signal which has been latched is provided to the memory cell via a pair of I/O lines. As a result, the time required for the operation in the read-write cycle is shortened.

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Shozo Saito et al, "A 1Mb CMOS DRAM with Fast Page and Static Column Modes", IEEE International Solid-State Circuits Conference 1985, pp. 252-253.

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