Method of flash write for testing a RAM

Details Method of flash write for testing a RAM Method of flash write for testing a RAM

1990-03-20

1991-09-03

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Testing

371 211, G11C 1300

Patent

active

050460498

ABSTRACT:
In a memory device(DRAM), an improved flash write test method is disclosed whereby all the memory cells in a memory cell array of a memory device can be written with the internally same data or the externally same data. The bit lines are arranged such that the bit lines B/L and B/L are alternating throughout the memory cell array and such that one word line is connected to only one type(either B/L or B/L) of bit lines, and the data supply circuit is formed by a data controller which controls input/output drives according to the type of the bit lines connected to the selected word line.

REFERENCES:
patent: 4661930 (1987-04-01), Tran
patent: 4703453 (1987-10-01), Shinoda

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