Method for growing a high-melting-point metal film

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427 38, 4272551, 4272552, C23C 1400, C23C 1600

Patent

active

051804689

ABSTRACT:
There is disclosed a process for growing a high-melting-point metal film comprising the steps of forming a first ion-implanted layer in a given region of a silicon substrate, in which region a second ion-implanted layer is formed; contacting a high-melting-point metal fluoride gas with the surface of the second ion-implanted layer to adhere the high-melting-point metal thereto; growing the high-melting-point metal film of a given thickness by reacting the mixture of the high-melting-point metal fluoride and silane gas; and subjecting the silicon substrate to a heat treatment, characterized in that the above third and fourth steps are alternatively repeated.

REFERENCES:
patent: 4180596 (1979-12-01), Crowder
patent: 4565157 (1986-01-01), Brors
patent: 4595608 (1986-06-01), King
patent: 4741928 (1988-05-01), Wilson
patent: 4746549 (1988-05-01), Ito
patent: 4749597 (1988-06-01), Mendonea
patent: 4766006 (1988-08-01), Gaizi
patent: 4800105 (1989-01-01), Nakayama
patent: 4804560 (1989-02-01), Shioya
patent: 4847111 (1989-07-01), Chon
patent: 4849260 (1989-07-01), Kusumoto
patent: 4892843 (1990-01-01), Schmitz
patent: 4902533 (1990-02-01), White
patent: 4981723 (1991-01-01), Hirase

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for growing a high-melting-point metal film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for growing a high-melting-point metal film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for growing a high-melting-point metal film will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-100572

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.