Zirconium-doped zinc oxide structures and methods

Details Zirconium-doped zinc oxide structures and methods Zirconium-doped zinc oxide structures and methods

2007-02-13

2010-06-01

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21009, C257SE21171

Reexamination Certificate

active

07727910

ABSTRACT:
Methods of forming transparent conducting oxides and devices formed by these methods are shown. Monolayers that contain zinc and monolayers that contain zirconium are deposited onto a substrate and subsequently processed to form zirconium-doped zinc oxide. The resulting transparent conducing oxide includes properties such as an amorphous or nanocrystalline microstructure. Devices that include transparent conducing oxides formed with these methods have better step coverage over substrate topography and more robust film mechanical properties.

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