Zirconium-doped tantalum oxide films

Details Zirconium-doped tantalum oxide films Zirconium-doped tantalum oxide films

2006-07-26

2010-06-01

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257S288000, C257S310000, C257S678000

Reexamination Certificate

active

07727905

ABSTRACT:
Dielectric layers containing a zirconium-doped tantalum oxide layer, where the zirconium-doped tantalum oxide layer is arranged as a structure of one or more monolayers of tantalum oxide doped with zirconium, provide an insulating layer in a variety of structures for use in a wide range of electronic devices.

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