Zirconium-doped tantalum oxide films

Details Zirconium-doped tantalum oxide films Zirconium-doped tantalum oxide films

2004-08-02

2009-10-13

Luu, Chuong Anh (Department: 2892)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S783000, C438S785000, C438S240000

Reexamination Certificate

active

07601649

ABSTRACT:
A dielectric film containing zirconium-doped tantalum oxide arranged as a structure of one or more monolayers and a method of fabricating such a dielectric film produce a reliable dielectric layer for use in a variety of electronic devices. In an embodiment, a zirconium-doped tantalum oxide dielectric layer may be formed by depositing tantalum by atomic layer deposition onto a substrate surface and depositing a zirconium dopant by atomic layer deposition onto the substrate surface.

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