Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-07-15
2000-01-11
Thomas, Tom
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438761, 438763, 438765, 438769, 438775, 438785, 438786, 257213, 257288, 257310, 257410, 257411, H01L 21283, H01L 2131, H01L 21441, H01L 21469
Patent
active
060135530
ABSTRACT:
A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide.
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Stoltz Richard A.
Wallace Robert M.
Wilk Glen D.
Denker David
Donaldson Richard L.
Holland Robby T.
Souw Bernard
Texas Instruments Incorporated
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