Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-01-19
2000-07-04
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
H01L 2144
Patent
active
060838345
ABSTRACT:
A method of forming an interconnect or metal line in a semiconductor device using an zinc activated metal surface and electroless deposition. The invention forms an active metal layer (e.g., Al) layer on an insulating layer in a via hole, activates the active metal layer to form a Zn layer, and electrolessly deposits a metal (e.g., Cu, Ni, Au, or Ag) by reacting with the Zn layer. The metal layer is electroless deposited over the insulating layer. The metal layer fills the via hole to form a metal interconnect or line. Key features of the invention are the active metal layer and the zincate process (not a zinc particle process).
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Chang Jieh-Ting
Ke Chih-Ming
Shen Yun-Hung
Ackerman Stephen B.
Le Dung A
Nelms David
Saile George O.
Stoffel William J.
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