Zincate catalysis electroless metal deposition for via metal int

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

H01L 2144

Patent

active

060838345

ABSTRACT:
A method of forming an interconnect or metal line in a semiconductor device using an zinc activated metal surface and electroless deposition. The invention forms an active metal layer (e.g., Al) layer on an insulating layer in a via hole, activates the active metal layer to form a Zn layer, and electrolessly deposits a metal (e.g., Cu, Ni, Au, or Ag) by reacting with the Zn layer. The metal layer is electroless deposited over the insulating layer. The metal layer fills the via hole to form a metal interconnect or line. Key features of the invention are the active metal layer and the zincate process (not a zinc particle process).

REFERENCES:
patent: 4235648 (1980-11-01), Richardson
patent: 4567066 (1986-01-01), Schultz et al.
patent: 5017516 (1991-05-01), van der Putten
patent: 5028454 (1991-07-01), Lytle et al.
patent: 5147692 (1992-09-01), Bengston
patent: 5182006 (1993-01-01), Haydu et al.
patent: 5308796 (1994-05-01), Feldman et al.
patent: 5466360 (1995-11-01), Ehrsam et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Zincate catalysis electroless metal deposition for via metal int does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Zincate catalysis electroless metal deposition for via metal int, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Zincate catalysis electroless metal deposition for via metal int will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1486040

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.