Zero cost non-volatile memory cell with write and erase...

Details Zero cost non-volatile memory cell with write and erase... Zero cost non-volatile memory cell with write and erase...

2005-09-12

2009-02-17

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S250000, C438S251000, C438S257000, C438S275000, C438S276000, C438S279000, C438S289000, C438S291000

Reexamination Certificate

active

07491605

ABSTRACT:
A method for making a semiconductor structure of a memory device includes forming a capacitor having a gate dielectric between a gate conductor and a dopant region of a first conductivity type located in another dopant region of a second conductivity type, forming a bipolar transistor having a base region of the first conductivity type, and forming a field-effect transistor having a gate conductor coupled to the gate conductor of the capacitor, wherein the dopant region and the base region of the first conductivity type are formed in the same step to avoid additional cost in forming the capacitor.

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European Examination Report, 7 pages.

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