X-ray masks, their fabrication and use

X-ray or gamma ray systems or devices – Specific application – Lithography

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430 5, G21K 500

Patent

active

050200836

ABSTRACT:
An X-ray mask for manufacturing chips is produced by forming an X-ray transparent semiconductor membrane with gaps and including X-ray transparent material in the gaps. In one embodiment the opaque material is formed by sputtering Pt onto the semiconductor material to form Pt silicides in the gaps. In another embodiment the semiconductor material is exposed to W in a silane mixture and the W replaces the semiconductor material so that the W projects into the material.

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patent: 4401738 (1983-08-01), Iwamatsu
patent: 4451544 (1984-05-01), Kawabuchi
patent: 4661426 (1987-04-01), Matsuda et al.
patent: 4738907 (1988-04-01), Shigetomi et al.
patent: 4780382 (1988-10-01), Stengl et al.
patent: 4792461 (1988-12-01), Watakabe et al.

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