X-ray mask and method of manufacturing an X-ray mask

X-ray or gamma ray systems or devices – Specific application – Lithography

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156626, 156643, 156644, 156646, 156653, 156656, 156657, 1566591, 156662, 20419237, 430 5, G21K 500, H01L 21306, B44C 122, C23F 100

Patent

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050050753

ABSTRACT:
In a method of manufacturing an X-ray mask comprising a substrate, an X-ray transmission layer on the substrate, an X-ray absorption layer on the X-ray transmission layer, the X-ray transmission layer is flattened to remove undulation and to make roughness of the X-ray transmission layer smaller than 100 angstroms. The X-ray transmission layer may be formed by silicon carbide or silicon nitride. Alternatively, the X-ray transmission layer may have a multilayer structure of sandwiched structure comprising either a silicon carbide film or a silicon nitride film.

REFERENCES:
patent: 4384919 (1983-05-01), Casey
patent: 4543266 (1985-09-01), Matsuo et al.
patent: 4701391 (1987-10-01), Lentfer et al.
SPIE vol. 773 Electron-Beam, X-Ray and Ion-Beam Lithographies VI (1987).
SPIE vol. 923 Electron-Beam, X-Ray and Ion-Beam Technology Submicrometer Lithographies VII (1988).

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