X-ray or gamma ray systems or devices – Specific application – Lithography
Patent
1990-01-30
1991-04-02
Powell, William A.
X-ray or gamma ray systems or devices
Specific application
Lithography
156626, 156643, 156644, 156646, 156653, 156656, 156657, 1566591, 156662, 20419237, 430 5, G21K 500, H01L 21306, B44C 122, C23F 100
Patent
active
050050753
ABSTRACT:
In a method of manufacturing an X-ray mask comprising a substrate, an X-ray transmission layer on the substrate, an X-ray absorption layer on the X-ray transmission layer, the X-ray transmission layer is flattened to remove undulation and to make roughness of the X-ray transmission layer smaller than 100 angstroms. The X-ray transmission layer may be formed by silicon carbide or silicon nitride. Alternatively, the X-ray transmission layer may have a multilayer structure of sandwiched structure comprising either a silicon carbide film or a silicon nitride film.
REFERENCES:
patent: 4384919 (1983-05-01), Casey
patent: 4543266 (1985-09-01), Matsuo et al.
patent: 4701391 (1987-10-01), Lentfer et al.
SPIE vol. 773 Electron-Beam, X-Ray and Ion-Beam Lithographies VI (1987).
SPIE vol. 923 Electron-Beam, X-Ray and Ion-Beam Technology Submicrometer Lithographies VII (1988).
Kobayashi Masato
Sugawara Minoru
Yamaguchi Yoh-Ichi
Yamashiro Kazuhide
Hoya Corporation
Powell William A.
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